Manufacturer Product Number:
IRFB9N60APBF-BE3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
IRFB9N60APBF-BE3-DG
Description:
MOSFET N-CH 600V 9.2A TO220AB
Detailed Description:
N-Channel 600 V 9.2A (Tc) 170W (Tc) Through Hole TO-220AB
Inventory:
1024 Pcs New Original In Stock
12978089
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IRFB9N60APBF-BE3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
9.2A (Tc)
Rds On (Max) @ Id, Vgs
750mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
49 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1400 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
170W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
IRFB9
Datasheet & Documents
Datasheets
Additional Information
Other Names
742-IRFB9N60APBF-BE3
Standard Package
50
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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