IRF730APBF-BE3
Manufacturer Product Number:

IRF730APBF-BE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

IRF730APBF-BE3-DG

Description:

MOSFET N-CH 400V 5.5A TO220AB
Detailed Description:
N-Channel 400 V 5.5A (Tc) 74W (Tc) Through Hole TO-220AB

Inventory:

1000 Pcs New Original In Stock
12977633
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

IRF730APBF-BE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
400 V
Current - Continuous Drain (Id) @ 25°C
5.5A (Tc)
Rds On (Max) @ Id, Vgs
1Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
74W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
IRF730

Datasheet & Documents

Datasheets

Additional Information

Other Names
742-IRF730APBF-BE3
Standard Package
50

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
vishay-siliconix

IRFBE20PBF-BE3

MOSFET N-CH 800V 1.8A TO220AB

goford-semiconductor

GT6K2P10IH

MOSFET P-CH 100V 1A SOT-23

toshiba-semiconductor-and-storage

TPH9R00CQH,LQ

UMOS10 SOP-ADV(N) 150V 9MOHM

onsemi

FDS9435ANBAD008

MOSFET P-CH 30V 5.3A 8-SOIC