Manufacturer Product Number:
UF3C120080K3S
Product Overview
Manufacturer:
Qorvo
DiGi Electronics Part Number:
UF3C120080K3S-DG
Description:
SICFET N-CH 1200V 33A TO247-3
Detailed Description:
N-Channel 1200 V 33A (Tc) 254.2W (Tc) Through Hole TO-247-3
Inventory:
17660 Pcs New Original In Stock
12967099
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UF3C120080K3S Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Qorvo
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
12V
Rds On (Max) @ Id, Vgs
100mOhm @ 20A, 12V
Vgs(th) (Max) @ Id
6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 15 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
254.2W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
UF3C120080
Datasheet & Documents
Datasheets
Additional Information
Other Names
2312-UF3C120080K3S
Standard Package
30
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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