Manufacturer Product Number:
TPH3206LSGB
Product Overview
Manufacturer:
Transphorm
DiGi Electronics Part Number:
TPH3206LSGB-DG
Description:
GANFET N-CH 650V 16A 3PQFN
Detailed Description:
N-Channel 650 V 16A (Tc) 81W (Tc) Surface Mount 3-PQFN (8x8)
Inventory:
13275977
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
TPH3206LSGB Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Transphorm
Packaging
-
Series
-
Product Status
Obsolete
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
8V
Rds On (Max) @ Id, Vgs
180mOhm @ 10A, 8V
Vgs(th) (Max) @ Id
2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
6.2 nC @ 4.5 V
Vgs (Max)
±18V
Input Capacitance (Ciss) (Max) @ Vds
720 pF @ 480 V
FET Feature
-
Power Dissipation (Max)
81W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
3-PQFN (8x8)
Package / Case
3-PowerDFN
Additional Information
Other Names
1707-TPH3206LSGB
Standard Package
1
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
TP65H150G4LSG
MANUFACTURER
Transphorm
QUANTITY AVAILABLE
2939
DiGi PART NUMBER
TP65H150G4LSG-DG
UNIT PRICE
2.18
SUBSTITUTE TYPE
Similar
DIGI Certification
Related Products
IPA029N06NM5SXKSA1
MOSFET N-CH 60V 87A TO220
IPB60R070CFD7ATMA1
MOSFET N-CH 600V 31A TO263-3
BSZ039N06NSATMA1
MOSFET N-CH 60V 18A/40A TSDSON