Manufacturer Product Number:
TW048N65C,S1F
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
TW048N65C,S1F-DG
Description:
G3 650V SIC-MOSFET TO-247 48MOH
Detailed Description:
N-Channel 650 V 40A (Tc) 132W (Tc) Through Hole TO-247
Inventory:
43 Pcs New Original In Stock
12987500
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
TW048N65C,S1F Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
65mOhm @ 20A, 18V
Vgs(th) (Max) @ Id
5V @ 1.6mA
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 18 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1362 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
132W (Tc)
Operating Temperature
175°C
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
Datasheet & Documents
Datasheets
Additional Information
Other Names
TW048N65C,S1F(S
264-TW048N65CS1F
Standard Package
30
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
NTD5C684NL
MOSFET N-CH 60V 46A DPAK
G20P10KE
P-CH, -100V, 20A, RD(MAX)<116M@-
TW107N65C,S1F
G3 650V SIC-MOSFET TO-247 107MO
