TTC011B,Q
Manufacturer Product Number:

TTC011B,Q

Product Overview

Manufacturer:

Toshiba Semiconductor and Storage

DiGi Electronics Part Number:

TTC011B,Q-DG

Description:

PB-FPOWERTRANSISTORTO-126NPC=10W
Detailed Description:
Bipolar (BJT) Transistor NPN 230 V 1 A 100MHz 1.5 W Through Hole TO-126N

Inventory:

180 Pcs New Original In Stock
12988794
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TTC011B,Q Technical Specifications

Category
Bipolar (BJT), Single Bipolar Transistors
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tray
Series
-
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
230 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max)
200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA, 5V
Power - Max
1.5 W
Frequency - Transition
100MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126N

Datasheet & Documents

Datasheets
TTC011B

Additional Information

Other Names
264-TTC011B,Q
264-TTC011BQ
264-TTC011B,Q-DG
Standard Package
250

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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