TPN4R806PL,L1Q
Manufacturer Product Number:

TPN4R806PL,L1Q

Product Overview

Manufacturer:

Toshiba Semiconductor and Storage

DiGi Electronics Part Number:

TPN4R806PL,L1Q-DG

Description:

MOSFET N-CH 60V 72A 8TSON
Detailed Description:
N-Channel 60 V 72A (Tc) 630mW (Ta), 104W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)

Inventory:

13199 Pcs New Original In Stock
12920893
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

TPN4R806PL,L1Q Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tape & Reel (TR)
Series
U-MOSIX-H
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
72A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id
2.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2770 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
630mW (Ta), 104W (Tc)
Operating Temperature
175°C
Mounting Type
Surface Mount
Supplier Device Package
8-TSON Advance (3.1x3.1)
Package / Case
8-PowerVDFN
Base Product Number
TPN4R806

Datasheet & Documents

Datasheets

Additional Information

Other Names
264-TPN4R806PLL1QTR
264-TPN4R806PLL1QCT
264-TPN4R806PLL1QDKR
TPN4R806PL,L1Q(M
Standard Package
5,000

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
toshiba-semiconductor-and-storage

TK110P10PL,RQ

X35 PB-F POWER MOSFET TRANSISTOR

toshiba-semiconductor-and-storage

TK3R3A06PL,S4X

X35 PB-F POWER MOSFET TRANSISTOR

toshiba-semiconductor-and-storage

TK16J60W5,S1VQ

X35 PB-F POWER MOSFET TRANSISTOR

toshiba-semiconductor-and-storage

TK17A65W5,S5X

X35 PB-F POWER MOSFET TRANSISTOR