TPH2R408QM,L1Q
Manufacturer Product Number:

TPH2R408QM,L1Q

Product Overview

Manufacturer:

Toshiba Semiconductor and Storage

DiGi Electronics Part Number:

TPH2R408QM,L1Q-DG

Description:

MOSFET N-CH 80V 120A 8SOP
Detailed Description:
N-Channel 80 V 120A (Tc) 3W (Ta), 210W (Tc) Surface Mount 8-SOP Advance (5x5)

Inventory:

12765 Pcs New Original In Stock
12928432
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TPH2R408QM,L1Q Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tape & Reel (TR)
Series
U-MOSX-H
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
2.43mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
87 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
8300 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
3W (Ta), 210W (Tc)
Operating Temperature
175°C
Mounting Type
Surface Mount
Supplier Device Package
8-SOP Advance (5x5)
Package / Case
8-PowerVDFN
Base Product Number
TPH2R408

Datasheet & Documents

Datasheets

Additional Information

Other Names
264-TPH2R408QML1QTR
264-TPH2R408QML1QCT
TPH2R408QM,L1Q(M
264-TPH2R408QML1QDKR
Standard Package
5,000

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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