Manufacturer Product Number:
TK8Q65W,S1Q
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
TK8Q65W,S1Q-DG
Description:
MOSFET N-CH 650V 7.8A IPAK
Detailed Description:
N-Channel 650 V 7.8A (Ta) 80W (Tc) Through Hole I-Pak
Inventory:
5 Pcs New Original In Stock
12891630
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TK8Q65W,S1Q Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tube
Series
DTMOSIV
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
7.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
670mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id
3.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
570 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
80W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Package / Case
TO-251-3 Stub Leads, IPak
Base Product Number
TK8Q65
Datasheet & Documents
Datasheets
Additional Information
Other Names
TK8Q65WS1Q
TK8Q65W,S1Q(S
Standard Package
75
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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