Manufacturer Product Number:
TK3R2A08QM,S4X
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
TK3R2A08QM,S4X-DG
Description:
UMOS10 TO-220SIS 80V 3.2MOHM
Detailed Description:
N-Channel 80 V 92A (Tc) 45W (Tc) Through Hole TO-220SIS
Inventory:
12965723
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
TK3R2A08QM,S4X Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tube
Series
U-MOSX-H
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
92A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
3.2mOhm @ 46A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs
102 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7670 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
45W (Tc)
Operating Temperature
175°C
Mounting Type
Through Hole
Supplier Device Package
TO-220SIS
Package / Case
TO-220-3 Full Pack
Datasheet & Documents
Datasheets
Additional Information
Other Names
TK3R2A08QM,S4X(S
264-TK3R2A08QMS4X
264-TK3R2A08QM,S4X
264-TK3R2A08QM,S4X-DG
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
SQJ186EP-T1_GE3
AUTOMOTIVE N-CHANNEL 80 V (D-S)
SI7386DP-T1-GE3
MOSFET N-CH 30V 12A PPAK SO-8
TK6R8A08QM,S4X
UMOS10 TO-220SIS 80V 6.8MOHM
