Manufacturer Product Number:
TK35N65W,S1F
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
TK35N65W,S1F-DG
Description:
MOSFET N-CH 650V 35A TO247
Detailed Description:
N-Channel 650 V 35A (Ta) 270W (Tc) Through Hole TO-247
Inventory:
15 Pcs New Original In Stock
12890304
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TK35N65W,S1F Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tube
Series
DTMOSIV
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
35A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
80mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 2.1mA
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
4100 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
270W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
Base Product Number
TK35N65
Datasheet & Documents
Datasheets
Additional Information
Other Names
TK35N65W,S1F(S
TK35N65W,S1F-DG
TK35N65WS1F
Standard Package
30
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
IXFX80N60P3
MANUFACTURER
IXYS
QUANTITY AVAILABLE
3
DiGi PART NUMBER
IXFX80N60P3-DG
UNIT PRICE
11.27
SUBSTITUTE TYPE
Similar
PART NUMBER
IXFX64N60P3
MANUFACTURER
IXYS
QUANTITY AVAILABLE
1060
DiGi PART NUMBER
IXFX64N60P3-DG
UNIT PRICE
8.28
SUBSTITUTE TYPE
Similar
DIGI Certification
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