Manufacturer Product Number:
TK34E10N1,S1X
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
TK34E10N1,S1X-DG
Description:
MOSFET N-CH 100V 75A TO220
Detailed Description:
N-Channel 100 V 75A (Tc) 103W (Tc) Through Hole TO-220
Inventory:
5 Pcs New Original In Stock
12889476
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
TK34E10N1,S1X Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tube
Series
U-MOSVIII-H
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
9.5mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2600 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
103W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
TK34E10
Datasheet & Documents
Datasheets
Additional Information
Other Names
TK34E10N1,S1X(S
TK34E10N1S1X
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
IPP100N08N3GXKSA1
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
587
DiGi PART NUMBER
IPP100N08N3GXKSA1-DG
UNIT PRICE
1.00
SUBSTITUTE TYPE
Similar
DIGI Certification
Related Products
TK20V60W,LVQ
MOSFET N-CH 600V 20A 4DFN
TK16G60W,RVQ
MOSFET N CH 600V 15.8A D2PAK
TK8A45D(STA4,Q,M)
MOSFET N-CH 450V 8A TO220SIS
