TK31N60W,S1VF
Manufacturer Product Number:

TK31N60W,S1VF

Product Overview

Manufacturer:

Toshiba Semiconductor and Storage

DiGi Electronics Part Number:

TK31N60W,S1VF-DG

Description:

MOSFET N CH 600V 30.8A TO247
Detailed Description:
N-Channel 600 V 30.8A (Ta) 230W (Tc) Through Hole TO-247

Inventory:

12889718
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TK31N60W,S1VF Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tube
Series
DTMOSIV
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
88mOhm @ 15.4A, 10V
Vgs(th) (Max) @ Id
3.7V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs
86 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3000 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
230W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
Base Product Number
TK31N60

Datasheet & Documents

Datasheets

Additional Information

Other Names
TK31N60WS1VF
TK31N60W,S1VF(S
Standard Package
30

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Alternative Models

PART NUMBER
IXKH47N60C
MANUFACTURER
IXYS
QUANTITY AVAILABLE
141
DiGi PART NUMBER
IXKH47N60C-DG
UNIT PRICE
14.94
SUBSTITUTE TYPE
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