Manufacturer Product Number:
TK190E65Z,S1X
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
TK190E65Z,S1X-DG
Description:
650V DTMOS VI TO-220 190MOHM
Detailed Description:
N-Channel 650 V 15A (Ta) 130W (Tc) Through Hole TO-220
Inventory:
121 Pcs New Original In Stock
12988147
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TK190E65Z,S1X Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
15A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id
4V @ 610µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1370 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
130W (Tc)
Operating Temperature
150°C
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Datasheet & Documents
Datasheets
Additional Information
Other Names
264-TK190E65ZS1X
264-TK190E65Z,S1X
264-TK190E65Z,S1X-DG
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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