Manufacturer Product Number:
TK12E80W,S1X
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
TK12E80W,S1X-DG
Description:
MOSFET N-CH 800V 11.5A TO220
Detailed Description:
N-Channel 800 V 11.5A (Ta) 165W (Tc) Through Hole TO-220
Inventory:
12949829
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
TK12E80W,S1X Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tube
Series
DTMOSIV
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
450mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id
4V @ 570µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1400 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
165W (Tc)
Operating Temperature
150°C
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
TK12E80
Datasheet & Documents
Datasheets
Additional Information
Other Names
TK12E80WS1X
TK12E80W,S1X(S
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
STP13N80K5
MANUFACTURER
STMicroelectronics
QUANTITY AVAILABLE
312
DiGi PART NUMBER
STP13N80K5-DG
UNIT PRICE
1.60
SUBSTITUTE TYPE
Similar
DIGI Certification
Related Products
TK62J60W,S1VQ
MOSFET N-CH 600V 61.8A TO3P
DMPH6250SQ-13
MOSFET P-CH 60V 2.4A SOT23 T&R
TSM4N80CZ C0G
MOSFET N-CHANNEL 800V 4A TO220
