Manufacturer Product Number:
TK11P65W,RQ
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
TK11P65W,RQ-DG
Description:
MOSFET N-CH 650V 11.1A DPAK
Detailed Description:
N-Channel 650 V 11.1A (Ta) 100W (Tc) Surface Mount DPAK
Inventory:
485 Pcs New Original In Stock
12890836
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TK11P65W,RQ Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tape & Reel (TR)
Series
DTMOSIV
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
11.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
440mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 450µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
890 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
100W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
TK11P65
Datasheet & Documents
Datasheets
Additional Information
Other Names
264-TK11P65W,RQCT
TK11P65W,RQ(S
TK11P65WRQDKR
TK11P65WRQTR-DG
TK11P65WRQCT-DG
TK11P65WRQDKR-DG
TK11P65WRQCT
TK11P65WRQTR
264-TK11P65W,RQTR
264-TK11P65W,RQDKR
Standard Package
2,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
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