Manufacturer Product Number:
SSM6J212FE,LF
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
SSM6J212FE,LF-DG
Description:
MOSFET P-CH 20V 4A ES6
Detailed Description:
P-Channel 20 V 4A (Ta) 500mW (Ta) Surface Mount ES6
Inventory:
12889356
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SSM6J212FE,LF Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tape & Reel (TR)
Series
U-MOSVI
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Rds On (Max) @ Id, Vgs
40.7mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
14.1 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
970 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
ES6
Package / Case
SOT-563, SOT-666
Base Product Number
SSM6J212
Datasheet & Documents
Datasheets
Additional Information
Other Names
SSM6J212FELFCT
SSM6J212FE(TE85LFTR-DG
SSM6J212FE(TE85LFTR
SSM6J212FELFDKRINACTIVE
SSM6J212FE(TE85LFDKR-DG
SSM6J212FE(TE85LFCT-DG
SSM6J212FE,LF(CA
SSM6J212FETE85LF
SSM6J212FE(TE85LFCT
SSM6J212FELFCTINACTIVE
SSM6J212FE(TE85L,F
SSM6J212FELFTR
SSM6J212FELFDKR
SSM6J212FELF
SSM6J212FELFTRINACTIVE
SSM6J212FE(TE85LFDKR
Standard Package
4,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
DIGI Certification
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