RN1314,LF
Manufacturer Product Number:

RN1314,LF

Product Overview

Manufacturer:

Toshiba Semiconductor and Storage

DiGi Electronics Part Number:

RN1314,LF-DG

Description:

TRANS PREBIAS NPN 50V 0.1A USM
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW Surface Mount USM

Inventory:

2680 Pcs New Original In Stock
12994082
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RN1314,LF Technical Specifications

Category
Bipolar (BJT), Single, Pre-Biased Bipolar Transistors
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
1 kOhms
Resistor - Emitter Base (R2)
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
250 MHz
Power - Max
100 mW
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Supplier Device Package
USM
Base Product Number
RN1314

Datasheet & Documents

Datasheets
RN1314-18

Additional Information

Other Names
264-RN1314,LFDKR
264-RN1314LFTR-DG
264-RN1314LFTR
264-RN1314,LFCT
264-RN1314,LFTR
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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