Manufacturer Product Number:
RN1106MFV,L3F
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
RN1106MFV,L3F-DG
Description:
TRANS PREBIAS NPN 50V 0.1A VESM
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
Inventory:
53233 Pcs New Original In Stock
12891576
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RN1106MFV,L3F Technical Specifications
Category
Bipolar (BJT), Single, Pre-Biased Bipolar Transistors
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
4.7 kOhms
Resistor - Emitter Base (R2)
47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)
500nA
Power - Max
150 mW
Mounting Type
Surface Mount
Package / Case
SOT-723
Supplier Device Package
VESM
Base Product Number
RN1106
Datasheet & Documents
Datasheets
Additional Information
Other Names
RN1106MFV,L3F(T
RN1106MFVL3F-DG
RN1106MFV,L3F(B
RN1106MFVL3F(B
RN1106MFVL3F(T
RN1106MFVL3FDKR
RN1106MFVL3F
RN1106MFVL3FTR
RN1106MFVL3FCT
Standard Package
8,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
DIGI Certification
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