Manufacturer Product Number:
RN1103,LF(CT
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
RN1103,LF(CT-DG
Description:
TRANS PREBIAS NPN 50V 0.1A SSM
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW Surface Mount SSM
Inventory:
3000 Pcs New Original In Stock
12889636
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RN1103,LF(CT Technical Specifications
Category
Bipolar (BJT), Single, Pre-Biased Bipolar Transistors
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
22 kOhms
Resistor - Emitter Base (R2)
22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
250 MHz
Power - Max
100 mW
Mounting Type
Surface Mount
Package / Case
SC-75, SOT-416
Supplier Device Package
SSM
Base Product Number
RN1103
Additional Information
Other Names
RN1103LF(CTTR
RN1103LF(CTDKR
RN1103T5LFT
RN1103(T5LFT)CT
RN1103(T5LFT)DKR-DG
RN1103(T5L,F,T)
RN1103(T5LFT)CT-DG
RN1103(T5LFT)TR-DG
RN1103LF(CTCT
RN1103,LF(CTTR-DG
RN1103(T5LFT)TR
RN1103(T5LFT)DKR
RN1103,LF(CB
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
DIGI Certification
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