Manufacturer Product Number:
MT3S111TU,LF
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
MT3S111TU,LF-DG
Description:
RF SIGE NPN BIPOLAR TRANSISTOR N
Detailed Description:
RF Transistor NPN 6V 100mA 10GHz 800mW Surface Mount UFM
Inventory:
3000 Pcs New Original In Stock
12889337
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MT3S111TU,LF Technical Specifications
Category
Bipolar (BJT), Bipolar RF Transistors
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
6V
Frequency - Transition
10GHz
Noise Figure (dB Typ @ f)
0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Gain
12.5dB
Power - Max
800mW
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 30mA, 5V
Current - Collector (Ic) (Max)
100mA
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
3-SMD, Flat Lead
Supplier Device Package
UFM
Base Product Number
MT3S111
Datasheet & Documents
Datasheets
Additional Information
Other Names
MT3S111TULFDKR
MT3S111TU,LF(T
MT3S111TU,LF(B
MT3S111TULFCT
MT3S111TULFTR
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
DIGI Certification
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