Manufacturer Product Number:
HN3C51F-BL(TE85L,F
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
HN3C51F-BL(TE85L,F-DG
Description:
TRANS 2NPN 120V 0.1A SM6
Detailed Description:
Bipolar (BJT) Transistor Array 2 NPN (Dual) 120V 100mA 100MHz 300mW Surface Mount SM6
Inventory:
12889539
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HN3C51F-BL(TE85L,F Technical Specifications
Category
Bipolar (BJT), Bipolar Transistor Arrays
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
-
Series
-
Product Status
Obsolete
Transistor Type
2 NPN (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
120V
Vce Saturation (Max) @ Ib, Ic
300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
350 @ 2mA, 6V
Power - Max
300mW
Frequency - Transition
100MHz
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SC-74, SOT-457
Supplier Device Package
SM6
Base Product Number
HN3C51
Additional Information
Other Names
HN3C51F-BL(TE85LF)CT-DG
HN3C51F-BL(TE85L,F)
HN3C51F-BLTE85LF
HN3C51F-BL (TE85L,F
HN3C51F-BL(TE85LFCT
HN3C51FBL(TE85LFTR
HN3C51F-BL(TE85LF)TR-DG
HN3C51FBL(TE85LFTR-DG
HN3C51F-BL(TE85LF)CT
HN3C51F-BL(TE85LF)DKR
HN3C51F-BL(TE85LF)TR
HN3C51F-BL(TE85LFTR
HN3C51F-BL(TE85LF)DKR-DG
HN3C51F-BL(TE85LFDKR
Standard Package
3,000
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Alternative Models
PART NUMBER
2SC4117-BL,LF
MANUFACTURER
Toshiba Semiconductor and Storage
QUANTITY AVAILABLE
16200
DiGi PART NUMBER
2SC4117-BL,LF-DG
UNIT PRICE
0.02
SUBSTITUTE TYPE
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DIGI Certification
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