Manufacturer Product Number:
HN3C10FUTE85LF
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
HN3C10FUTE85LF-DG
Description:
RF TRANS 2 NPN 12V 7GHZ US6
Detailed Description:
RF Transistor 2 NPN (Dual) 12V 80mA 7GHz 200mW Surface Mount US6
Inventory:
101 Pcs New Original In Stock
12890009
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HN3C10FUTE85LF Technical Specifications
Category
Bipolar (BJT), Bipolar RF Transistors
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Cut Tape (CT)
Series
-
Product Status
Active
Transistor Type
2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max)
12V
Frequency - Transition
7GHz
Noise Figure (dB Typ @ f)
1.1dB @ 1GHz
Gain
11.5dB
Power - Max
200mW
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 20mA, 10V
Current - Collector (Ic) (Max)
80mA
Operating Temperature
-
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
US6
Base Product Number
HN3C10
Additional Information
Other Names
HN3C10FUTE85LFTR
HN3C10FUTE85LFCT
HN3C10FUTE85LFDKR
HN3C10FU(TE85L,F)
Standard Package
3,000
Environmental & Export Classification
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Alternative Models
PART NUMBER
BFS483H6327XTSA1
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
48371
DiGi PART NUMBER
BFS483H6327XTSA1-DG
UNIT PRICE
0.23
SUBSTITUTE TYPE
Similar
DIGI Certification
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