Manufacturer Product Number:
2SK3700(F)
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
2SK3700(F)-DG
Description:
MOSFET N-CH 900V 5A TO3P
Detailed Description:
N-Channel 900 V 5A (Ta) 150W (Tc) Through Hole TO-3P(N)
Inventory:
122 Pcs New Original In Stock
12890167
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2SK3700(F) Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Bulk
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
5A (Ta)
Rds On (Max) @ Id, Vgs
2.5Ohm @ 3A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1150 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P(N)
Package / Case
TO-3P-3, SC-65-3
Base Product Number
2SK3700
Datasheet & Documents
Datasheets
Additional Information
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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