2SD1407A-Y(F)
Manufacturer Product Number:

2SD1407A-Y(F)

Product Overview

Manufacturer:

Toshiba Semiconductor and Storage

DiGi Electronics Part Number:

2SD1407A-Y(F)-DG

Description:

TRANS NPN 100V 5A TO220NIS
Detailed Description:
Bipolar (BJT) Transistor NPN 100 V 5 A 12MHz 30 W Through Hole TO-220NIS

Inventory:

12891164
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2SD1407A-Y(F) Technical Specifications

Category
Bipolar (BJT), Single Bipolar Transistors
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
-
Series
-
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
5 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
2V @ 400mA, 4A
Current - Collector Cutoff (Max)
100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1A, 5V
Power - Max
30 W
Frequency - Transition
12MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220NIS
Base Product Number
2SD1407

Additional Information

Standard Package
50

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Alternative Models

PART NUMBER
MJF31CG
MANUFACTURER
onsemi
QUANTITY AVAILABLE
231
DiGi PART NUMBER
MJF31CG-DG
UNIT PRICE
0.44
SUBSTITUTE TYPE
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