Manufacturer Product Number:
TSM80N1R2CI
Product Overview
Manufacturer:
Taiwan Semiconductor Corporation
DiGi Electronics Part Number:
TSM80N1R2CI-DG
Description:
800V, 5.5A, SINGLE N-CHANNEL POW
Detailed Description:
N-Channel 800 V 5.5A (Tc) 25W (Tc) Through Hole ITO-220
Inventory:
12998598
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TSM80N1R2CI Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Taiwan Semiconductor
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.2Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
19.4 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
685 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
25W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
ITO-220
Package / Case
TO-220-3 Full Pack, Isolated Tab
Base Product Number
TSM80
Datasheet & Documents
Datasheets
Additional Information
Other Names
1801-TSM80N1R2CI
Standard Package
4,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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