Manufacturer Product Number:
TSM60NB190CI
Product Overview
Manufacturer:
Taiwan Semiconductor Corporation
DiGi Electronics Part Number:
TSM60NB190CI-DG
Description:
600V, 18A, SINGLE N-CHANNEL POWE
Detailed Description:
N-Channel 600 V 18A (Tc) 33.8W (Tc) Through Hole ITO-220
Inventory:
13001274
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TSM60NB190CI Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Taiwan Semiconductor
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1273 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
33.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
ITO-220
Package / Case
TO-220-3 Full Pack, Isolated Tab
Base Product Number
TSM60
Datasheet & Documents
Datasheets
Additional Information
Other Names
1801-TSM60NB190CI
Standard Package
4,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
TSM60NB190CI C0G
MANUFACTURER
Taiwan Semiconductor Corporation
QUANTITY AVAILABLE
731
DiGi PART NUMBER
TSM60NB190CI C0G-DG
UNIT PRICE
2.49
SUBSTITUTE TYPE
Parametric Equivalent
DIGI Certification
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