Manufacturer Product Number:
TSM60NB099CZ
Product Overview
Manufacturer:
Taiwan Semiconductor Corporation
DiGi Electronics Part Number:
TSM60NB099CZ-DG
Description:
600V, 38A, SINGLE N-CHANNEL POWE
Detailed Description:
N-Channel 600 V 38A (Tc) 298W (Tc) Through Hole TO-220
Inventory:
13001401
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
TSM60NB099CZ Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Taiwan Semiconductor
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
99mOhm @ 11.3A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
62 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2587 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
298W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
TSM60
Datasheet & Documents
Datasheets
Additional Information
Other Names
1801-TSM60NB099CZ
Standard Package
4,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
RH6P040BHTB1
NCH 100V 40A, HSMT8, POWER MOSFE
30N03A
TO-252 MOSFETS ROHS
EPC2619ENGRT
TRANS GAN 80V .0033OHM 6LGA
