Manufacturer Product Number:
TSM4NB60CH
Product Overview
Manufacturer:
Taiwan Semiconductor Corporation
DiGi Electronics Part Number:
TSM4NB60CH-DG
Description:
600V, 4A, SINGLE N-CHANNEL POWER
Detailed Description:
N-Channel 600 V 4A (Tc) 50W (Tc) Through Hole TO-251S (IPAK SL)
Inventory:
12999131
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
TSM4NB60CH Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Taiwan Semiconductor
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14.5 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
50W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251S (IPAK SL)
Package / Case
TO-251-3 Stub Leads, IPak
Base Product Number
TSM4
Datasheet & Documents
Datasheets
Additional Information
Other Names
1801-TSM4NB60CH
Standard Package
3,750
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
TSM240N03CX6
30V, 6.5A, SINGLE N-CHANNEL POWE
IXFP13N60X3
DISCRETE MOSFET 13A 600V X3 TO22
IMW120R007M1HXKSA1
SIC DISCRETE