Manufacturer Product Number:
STW58N65DM2AG
Product Overview
Manufacturer:
STMicroelectronics
DiGi Electronics Part Number:
STW58N65DM2AG-DG
Description:
MOSFET N-CH 650V 48A TO247
Detailed Description:
N-Channel 650 V 48A (Tc) 360W (Tc) Through Hole TO-247-3
Inventory:
12870895
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STW58N65DM2AG Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
STMicroelectronics
Packaging
Tube
Series
MDmesh™ DM2
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
65mOhm @ 24A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
88 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
4100 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
360W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
STW58
Datasheet & Documents
Datasheets
Additional Information
Other Names
497-16137-5
-1138-STW58N65DM2AG
Standard Package
30
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
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UNIT PRICE
3.43
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SUBSTITUTE TYPE
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DIGI Certification
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