Manufacturer Product Number:
STB33N60M2
Product Overview
Manufacturer:
STMicroelectronics
DiGi Electronics Part Number:
STB33N60M2-DG
Description:
MOSFET N-CH 600V 26A D2PAK
Detailed Description:
N-Channel 600 V 26A (Tc) 190W (Tc) Surface Mount TO-263 (D2PAK)
Inventory:
12877817
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STB33N60M2 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
STMicroelectronics
Packaging
Tape & Reel (TR)
Series
MDmesh™ II Plus
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
125mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
45.5 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1781 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
190W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
STB33
Datasheet & Documents
Datasheets
Additional Information
Other Names
497-14973-6
497-14973-1
497-14973-2
2156-STB33N60M2
Standard Package
1,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
IPB60R099CPATMA1
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
1212
DiGi PART NUMBER
IPB60R099CPATMA1-DG
UNIT PRICE
3.99
SUBSTITUTE TYPE
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