Manufacturer Product Number:
STB11NM60-1
Product Overview
Manufacturer:
STMicroelectronics
DiGi Electronics Part Number:
STB11NM60-1-DG
Description:
MOSFET N-CH 650V 11A I2PAK
Detailed Description:
N-Channel 650 V 11A (Tc) 160W (Tc) Through Hole I2PAK
Inventory:
12880578
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STB11NM60-1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
STMicroelectronics
Packaging
-
Series
MDmesh™
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
450mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
160W (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
STB11N
Additional Information
Other Names
STB11NM60-1-DG
497-5379-5
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
FCI7N60
MANUFACTURER
onsemi
QUANTITY AVAILABLE
990
DiGi PART NUMBER
FCI7N60-DG
UNIT PRICE
1.21
SUBSTITUTE TYPE
Similar
DIGI Certification
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