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Manufacturer Product Number:
SCT50N120
Product Overview
Manufacturer:
STMicroelectronics
DiGi Electronics Part Number:
SCT50N120-DG
Description:
SICFET N-CH 1200V 65A HIP247
Detailed Description:
N-Channel 1200 V 65A (Tc) 318W (Tc) Through Hole HiP247™
Inventory:
RFQ Online
12874195
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SCT50N120 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
STMicroelectronics
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
69mOhm @ 40A, 20V
Vgs(th) (Max) @ Id
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
122 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1900 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
318W (Tc)
Operating Temperature
-55°C ~ 200°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
HiP247™
Package / Case
TO-247-3
Base Product Number
SCT50
Datasheet & Documents
Datasheets
SCT50N120
Fine Tune SIC MOSFET Gate Driver
Additional Information
Other Names
-1138-SCT50N120
497-16598-5
Standard Package
30
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
G3R40MT12D
MANUFACTURER
GeneSiC Semiconductor
QUANTITY AVAILABLE
1725
DiGi PART NUMBER
G3R40MT12D-DG
UNIT PRICE
12.88
SUBSTITUTE TYPE
Similar
PART NUMBER
MSC040SMA120B
MANUFACTURER
Microchip Technology
QUANTITY AVAILABLE
61
DiGi PART NUMBER
MSC040SMA120B-DG
UNIT PRICE
16.98
SUBSTITUTE TYPE
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