Manufacturer Product Number:
SCT018H65G3AG
Product Overview
Manufacturer:
STMicroelectronics
DiGi Electronics Part Number:
SCT018H65G3AG-DG
Description:
H2PAK-7
Detailed Description:
N-Channel 650 V 55A (Tc) 385W (Tc) Surface Mount H2PAK-7
Inventory:
13269556
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SCT018H65G3AG Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
STMicroelectronics
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
27mOhm @ 30A, 18V
Vgs(th) (Max) @ Id
4.2V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
79.4 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
2124 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
385W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
H2PAK-7
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Additional Information
Other Names
497-SCT018H65G3AGTR
Standard Package
1,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
DIGI Certification
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