2SK536-TB-E
Manufacturer Product Number:

2SK536-TB-E

Product Overview

Manufacturer:

Sanyo

DiGi Electronics Part Number:

2SK536-TB-E-DG

Description:

N-CHANNEL ENHANCEMENT MOS SILICO
Detailed Description:
N-Channel 50 V 100mA (Ta) 200mW (Ta) Surface Mount 3-CP

Inventory:

3000 Pcs New Original In Stock
12946019
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2SK536-TB-E Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Packaging
Bulk
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
50 V
Current - Continuous Drain (Id) @ 25°C
100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
20Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id
-
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
15 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
200mW (Ta)
Operating Temperature
125°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
3-CP
Package / Case
TO-236-3, SC-59, SOT-23-3

Datasheet & Documents

Datasheets
2SK536-TB-E Datasheet

Additional Information

Other Names
2156-2SK536-TB-E
ONSSNY2SK536-TB-E
Standard Package
1,411

Environmental & Export Classification

ECCN
EAR99
HTSUS
8541.21.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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