Manufacturer Product Number:
RX3L18BBGC16
Product Overview
Manufacturer:
Rohm Semiconductor
DiGi Electronics Part Number:
RX3L18BBGC16-DG
Description:
NCH 60V 180A, TO-220AB, POWER MO
Detailed Description:
N-Channel 60 V 180A (Tc) 192W (Tc) Through Hole TO-220AB
Inventory:
954 Pcs New Original In Stock
13309431
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
RX3L18BBGC16 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
ROHM Semiconductor
Packaging
Tube
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.84mOhm @ 90A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
160 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
11000 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
192W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
RX3L18
Datasheet & Documents
Datasheets
Additional Information
Other Names
846-RX3L18BBGC16
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
G080P06T
P-60V,-195A,RD(MAX)<7.5M@-10V,VT
G130N06M
N60V, 90A,RD<12M@10V,VTH1.0V~2.4
GT023N10T
N100V, 140A,RD<2.7M@10V,VTH2.7V~
