Manufacturer Product Number:
RT1C060UNTR
Product Overview
Manufacturer:
Rohm Semiconductor
DiGi Electronics Part Number:
RT1C060UNTR-DG
Description:
MOSFET N-CH 20V 6A 8TSST
Detailed Description:
N-Channel 20 V 6A (Ta) 650mW (Ta) Surface Mount 8-TSST
Inventory:
13525411
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RT1C060UNTR Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
ROHM Semiconductor
Packaging
Tape & Reel (TR)
Series
-
Product Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Rds On (Max) @ Id, Vgs
28mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 4.5 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
870 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
650mW (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-TSST
Package / Case
8-SMD, Flat Lead
Base Product Number
RT1C060
Additional Information
Other Names
RT1C060UNDKR
RT1C060UNTRCT
RT1C060UNTRTR-ND
RT1C060UNTRTR
RT1C060UNTRCT-ND
RT1C060UNTRDKR
RT1C060UNTRDKR-ND
RT1C060UNCT
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
DIGI Certification
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