Manufacturer Product Number:
RD3P02BATTL1
Product Overview
Manufacturer:
Rohm Semiconductor
DiGi Electronics Part Number:
RD3P02BATTL1-DG
Description:
PCH -100V -20A POWER MOSFET: RD3
Detailed Description:
P-Channel 100 V 20A (Tc) 56W (Tc) Surface Mount TO-252
Inventory:
2440 Pcs New Original In Stock
13005575
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RD3P02BATTL1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
ROHM Semiconductor
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
116mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1480 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
56W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
RD3P02
Datasheet & Documents
Datasheets
Additional Information
Other Names
846-RD3P02BATTL1DKR
846-RD3P02BATTL1TR
846-RD3P02BATTL1CT
Standard Package
2,500
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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