Manufacturer Product Number:
RD3G03BATTL1
Product Overview
Manufacturer:
Rohm Semiconductor
DiGi Electronics Part Number:
RD3G03BATTL1-DG
Description:
PCH -40V -35A POWER MOSFET - RD3
Detailed Description:
P-Channel 40 V 35A (Tc) 56W (Tc) Surface Mount TO-252
Inventory:
4625 Pcs New Original In Stock
12987798
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
RD3G03BATTL1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
ROHM Semiconductor
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
19.1mOhm @ 35A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2100 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
56W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
RD3G03
Datasheet & Documents
Datasheets
Additional Information
Other Names
846-RD3G03BATTL1TR
846-RD3G03BATTL1DKR
846-RD3G03BATTL1CT
Standard Package
2,500
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
UF3C065080B7S
SICFET N-CH 650V 27A D2PAK-7
E3M0060065D
60M 650V SIC AUTOMOTIVE MOSFET
IPP019N06NF2SAKMA1
TRENCH 40<-<100V PG-TO220-3
