Manufacturer Product Number:
R6086YNZC17
Product Overview
Manufacturer:
Rohm Semiconductor
DiGi Electronics Part Number:
R6086YNZC17-DG
Description:
NCH 600V 33A, TO-3PF, POWER MOSF
Detailed Description:
N-Channel 600 V 33A (Tc) 114W (Tc) Through Hole TO-3PF
Inventory:
300 Pcs New Original In Stock
12992399
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R6086YNZC17 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
ROHM Semiconductor
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V, 12V
Rds On (Max) @ Id, Vgs
44mOhm @ 17A, 12V
Vgs(th) (Max) @ Id
6V @ 4.6mA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
5100 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
114W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PF
Package / Case
TO-3P-3 Full Pack
Datasheet & Documents
Datasheets
Additional Information
Other Names
846-R6086YNZC17
Standard Package
300
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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