Manufacturer Product Number:
R6012ANX
Product Overview
Manufacturer:
Rohm Semiconductor
DiGi Electronics Part Number:
R6012ANX-DG
Description:
MOSFET N-CH 600V 12A TO220FM
Detailed Description:
N-Channel 600 V 12A (Ta) 50W (Tc) Through Hole TO-220FM
Inventory:
13527508
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R6012ANX Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
ROHM Semiconductor
Packaging
Bulk
Series
-
Product Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
420mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
50W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220FM
Package / Case
TO-220-3 Full Pack
Base Product Number
R6012
Datasheet & Documents
Datasheets
Additional Information
Standard Package
500
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
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