BSM450D12P4G102
Manufacturer Product Number:

BSM450D12P4G102

Product Overview

Manufacturer:

Rohm Semiconductor

DiGi Electronics Part Number:

BSM450D12P4G102-DG

Description:

SIC 2N-CH 1200V 447A MODULE
Detailed Description:
Mosfet Array 1200V (1.2kV) 447A (Tc) 1.45kW (Tc) Chassis Mount Module

Inventory:

4 Pcs New Original In Stock
13001153
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BSM450D12P4G102 Technical Specifications

Category
FETs, MOSFETs, FET, MOSFET Arrays
Manufacturer
ROHM Semiconductor
Packaging
Box
Series
-
Product Status
Active
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel
FET Feature
Standard
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
447A (Tc)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
4.8V @ 218.4mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
44000pF @ 10V
Power - Max
1.45kW (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Base Product Number
BSM450

Datasheet & Documents

Datasheets
BSM450D12P4G102

Additional Information

Other Names
846-BSM450D12P4G102
Standard Package
4

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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