Manufacturer Product Number:
BSM180D12P2C101
Product Overview
Manufacturer:
Rohm Semiconductor
DiGi Electronics Part Number:
BSM180D12P2C101-DG
Description:
SIC 2N-CH 1200V 204A MODULE
Detailed Description:
Mosfet Array 1200V (1.2kV) 204A (Tc) 1130W Module
Inventory:
1 Pcs New Original In Stock
13523041
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BSM180D12P2C101 Technical Specifications
Category
FETs, MOSFETs, FET, MOSFET Arrays
Manufacturer
ROHM Semiconductor
Packaging
Bulk
Series
-
Product Status
Active
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
204A (Tc)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
23000pF @ 10V
Power - Max
1130W
Operating Temperature
-40°C ~ 150°C (TJ)
Package / Case
Module
Supplier Device Package
Module
Base Product Number
BSM180
Datasheet & Documents
Datasheets
Reliability Documents
Additional Information
Other Names
Q7641253A
Standard Package
12
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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