Manufacturer Product Number:
2SK3447TZ-E
Product Overview
Manufacturer:
Renesas
DiGi Electronics Part Number:
2SK3447TZ-E-DG
Description:
2SK3447TZ-E - SILICON N CHANNEL
Detailed Description:
N-Channel 150 V 1A (Ta) 900mW (Ta) Through Hole TO-92MOD
Inventory:
10000 Pcs New Original In Stock
12976885
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2SK3447TZ-E Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Renesas Electronics Corporation
Packaging
Bulk
Series
-
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
1.95Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
4.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
85 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
900mW (Ta)
Operating Temperature
150°C
Mounting Type
Through Hole
Supplier Device Package
TO-92MOD
Package / Case
TO-226-3, TO-92-3 Long Body
Additional Information
Other Names
2156-2SK3447TZ-E
Standard Package
728
Environmental & Export Classification
RoHS Status
RoHS non-compliant
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0095
DIGI Certification
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