Manufacturer Product Number:
NTMT090N65S3HF
Product Overview
Manufacturer:
onsemi
DiGi Electronics Part Number:
NTMT090N65S3HF-DG
Description:
POWER MOSFET, N-CHANNEL, SUPERFE
Detailed Description:
N-Channel 650 V 36A (Tc) 272W (Tc) Surface Mount 4-PQFN (8x8)
Inventory:
12990357
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
NTMT090N65S3HF Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
Tape & Reel (TR)
Series
SuperFET® III, FRFET®
Product Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
90mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
5V @ 860µA
Gate Charge (Qg) (Max) @ Vgs
66 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2930 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
272W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
4-PQFN (8x8)
Package / Case
4-PowerTSFN
Datasheet & Documents
Datasheets
Additional Information
Other Names
488-NTMT090N65S3HFDKR
488-NTMT090N65S3HFTR
488-NTMT090N65S3HFCT
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
S2M0080120D
MOSFET SILICON CARBIDE SIC 1200V
TK3A90E,S4X
PB-F POWER MOSFET TRANSISTOR TO-
ICE15N60W
Superjunction MOSFET
