NTH4L080N120SC1
Manufacturer Product Number:

NTH4L080N120SC1

Product Overview

Manufacturer:

onsemi

DiGi Electronics Part Number:

NTH4L080N120SC1-DG

Description:

SICFET N-CH 1200V 29A TO247-4
Detailed Description:
N-Channel 1200 V 29A (Tc) 170W (Tc) Through Hole TO-247-4L

Inventory:

430 Pcs New Original In Stock
12938839
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NTH4L080N120SC1 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 20 V
Vgs (Max)
+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds
1670 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
170W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Package / Case
TO-247-4
Base Product Number
NTH4L080

Datasheet & Documents

Datasheets
NTH4L080N120SC1

Additional Information

Other Names
488-NTH4L080N120SC1
2156-NTH4L080N120SC1
Standard Package
30

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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