MJD112-001
Manufacturer Product Number:

MJD112-001

Product Overview

Manufacturer:

onsemi

DiGi Electronics Part Number:

MJD112-001-DG

Description:

TRANS NPN DARL 100V 2A IPAK
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A 25MHz 1.75 W Through Hole I-PAK

Inventory:

12851425
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MJD112-001 Technical Specifications

Category
Bipolar (BJT), Single Bipolar Transistors
Manufacturer
onsemi
Packaging
-
Series
-
Product Status
Obsolete
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
3V @ 40mA, 4A
Current - Collector Cutoff (Max)
20µA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 2A, 3V
Power - Max
1.75 W
Frequency - Transition
25MHz
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
I-PAK
Base Product Number
MJD11

Datasheet & Documents

Datasheets

Additional Information

Other Names
ONSONSMJD112-001
MJD112-001OS
2156-MJD112-001-ON
Standard Package
75

Environmental & Export Classification

RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Alternative Models

PART NUMBER
MJD112-1G
MANUFACTURER
onsemi
QUANTITY AVAILABLE
153
DiGi PART NUMBER
MJD112-1G-DG
UNIT PRICE
0.36
SUBSTITUTE TYPE
Direct
DIGI Certification
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