HUF75639S3
Manufacturer Product Number:

HUF75639S3

Product Overview

Manufacturer:

onsemi

DiGi Electronics Part Number:

HUF75639S3-DG

Description:

MOSFET N-CH 100V 56A I2PAK
Detailed Description:
N-Channel 100 V 56A (Tc) 200W (Tc) Through Hole TO-262 (I2PAK)

Inventory:

800 Pcs New Original In Stock
12851335
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HUF75639S3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
Tube
Series
UltraFET™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
25mOhm @ 56A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 20 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
HUF75639

Datasheet & Documents

Datasheets
HUF75639G3, P3, S3, S3S

Additional Information

Other Names
2832-HUF75639S3-488
2832-HUF75639S3
Standard Package
800

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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