Manufacturer Product Number:
FQP630TSTU
Product Overview
Manufacturer:
onsemi
DiGi Electronics Part Number:
FQP630TSTU-DG
Description:
MOSFET N-CH 200V 9A TO220-3
Detailed Description:
N-Channel 200 V 9A (Tc) 78W (Tc) Through Hole TO-220-3
Inventory:
12846360
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FQP630TSTU Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
-
Series
QFET®
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
550 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
78W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Base Product Number
FQP6
Datasheet & Documents
Datasheets
Additional Information
Standard Package
50
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
IRF630
MANUFACTURER
Harris Corporation
QUANTITY AVAILABLE
11535
DiGi PART NUMBER
IRF630-DG
UNIT PRICE
0.80
SUBSTITUTE TYPE
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