Manufacturer Product Number:
FQI4N80TU
Product Overview
Manufacturer:
onsemi
DiGi Electronics Part Number:
FQI4N80TU-DG
Description:
MOSFET N-CH 800V 3.9A I2PAK
Detailed Description:
N-Channel 800 V 3.9A (Tc) 3.13W (Ta), 130W (Tc) Through Hole TO-262 (I2PAK)
Inventory:
12847848
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FQI4N80TU Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
-
Series
QFET®
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.6Ohm @ 1.95A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
880 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 130W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
FQI4N80
Datasheet & Documents
Datasheets
Additional Information
Standard Package
1,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
IRFBE30LPBF
MANUFACTURER
Vishay Siliconix
QUANTITY AVAILABLE
990
DiGi PART NUMBER
IRFBE30LPBF-DG
UNIT PRICE
1.08
SUBSTITUTE TYPE
Similar
DIGI Certification
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